| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 58.0 A |
| Case/Package | TO-247-3 |
| Power Rating | 300 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.04 Ω |
| Polarity | N-Channel |
| Power Dissipation | 300 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 58.0 A |
| Rise Time | 15 ns |
| Input Capacitance (Ciss) | 4400pF @25V(Vds) |
| Input Power (Max) | 300 W |
| Fall Time | 16 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFH58N20 is a 200V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on) HDMOS™ process. The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
● Rugged polysilicon gate cell structure
● Unclamped Inductive Switching (UIS) rated
● Low inductance offers easy to drive and protect
● Fast intrinsic rectifier
● Space-saving s
● High power density
IXYS Semiconductor
4 Pages / 0.1 MByte
IXYS Semiconductor
20 Pages / 2.6 MByte
IXYS Semiconductor
Power Field-Effect Transistor, 58A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
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