| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 1.00 kV |
| Current Rating | 6.00 A |
| Case/Package | TO-247-3 |
| Power Rating | 180 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 2 Ω |
| Polarity | N-Channel |
| Power Dissipation | 180 W |
| Threshold Voltage | 4.5 V |
| Drain to Source Voltage (Vds) | 1 kV |
| Continuous Drain Current (Ids) | 6.00 A |
| Rise Time | 40 ns |
| Input Capacitance (Ciss) | 2600pF @25V(Vds) |
| Input Power (Max) | 180 W |
| Fall Time | 60 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 180W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFH6N100 is a HiPerFET™ N-channel enhancement-mode Power MOSFET features low package inductance and fast intrinsic rectifier.
● International standard package
● Rugged polysilicon gate cell structure
● Unclamped inductive switching (UIS) rated
● Low RDS (ON) HDMOS™ process
● High dV/dt and low trr
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