| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.04 Ω |
| Polarity | N-Channel |
| Power Dissipation | 600 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 300 V |
| Continuous Drain Current (Ids) | 88.0 A |
| Rise Time | 24 ns |
| Reverse recovery time | 200 ns |
| Input Capacitance (Ciss) | 6300pF @25V(Vds) |
| Input Power (Max) | 600 W |
| Fall Time | 25 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 600W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.26 mm |
| Size-Width | 5.3 mm |
| Size-Height | 21.46 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFH88N30P is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static drain-to-source ON-resistance and high power density. It is suitable for DC-to-DC converters, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.
● International standard packages
● Avalanche rating
● Low Qg
● Low package inductance
● Easy to mount
● Space saving
IXYS Semiconductor
5 Pages / 0.14 MByte
IXYS Semiconductor
1 Pages / 0.37 MByte
IXYS Semiconductor
5 Pages / 0.58 MByte
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