TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-264-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.024 Ω |
Polarity | N-Channel |
Power Dissipation | 1.04 kW |
Threshold Voltage | 5 V |
Drain to Source Voltage (Vds) | 300 V |
Continuous Drain Current (Ids) | 140 A |
Rise Time | 30 ns |
Input Capacitance (Ciss) | 14800pF @25V(Vds) |
Input Power (Max) | 1040 W |
Fall Time | 20 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1040W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFK140N30P is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static drain-to-source ON-resistance and high power density. It is suitable for DC-to-DC converters, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.
● Avalanche rating
● Low Qg
● Easy to mount
● Space saving
● Low package inductance
IXYS Semiconductor
5 Pages / 0.13 MByte
IXYS Semiconductor
5 Pages / 0.22 MByte
IXYS Semiconductor
6 Pages / 1.89 MByte
IXYS Semiconductor
Trans MOSFET N-CH 300V 140A 3Pin(3+Tab) TO-264
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