| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-264-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.19 Ω |
| Polarity | N-Channel |
| Power Dissipation | 1.2 kW |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 800 V |
| Breakdown Voltage (Drain to Source) | 800 V |
| Continuous Drain Current (Ids) | 44.0 A |
| Rise Time | 22 ns |
| Reverse recovery time | 250 ns |
| Input Capacitance (Ciss) | 12000pF @25V(Vds) |
| Input Power (Max) | 1040 W |
| Fall Time | 27 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1040W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 19.96 mm |
| Size-Width | 5.13 mm |
| Size-Height | 26.16 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFK44N80P is a PolarHV™ HiPerFET N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic diode.
● International standard package
● Unclamped inductive switching (UIS) rated
● Low package inductance
● Easy to mount
● Space savings
● High power density
IXYS Semiconductor
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IXYS Semiconductor
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IXYS Semiconductor
6 Pages / 1.89 MByte
IXYS Semiconductor
IXYS SEMICONDUCTOR IXFK44N80P Power MOSFET, N Channel, 44A, 800V, 190mohm, 10V, 5V
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