| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 48.0 A |
| Case/Package | TO-264-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.135 Ω |
| Polarity | N-Channel |
| Power Dissipation | 830 W |
| Threshold Voltage | 5 V |
| Input Capacitance | 8.86 nF |
| Gate Charge | 150 nC |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Continuous Drain Current (Ids) | 48.0 A |
| Rise Time | 25 ns |
| Input Capacitance (Ciss) | 8860pF @25V(Vds) |
| Input Power (Max) | 830 W |
| Fall Time | 22 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 830W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 19.96 mm |
| Size-Width | 5.13 mm |
| Size-Height | 26.16 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFK48N60P is a PolarHV™ HiPerFET N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic diode.
● International standard package
● Unclamped inductive switching (UIS) rated
● Low package inductance
● Easy to mount
● Space savings
● High power density
IXYS Semiconductor
4 Pages / 0.21 MByte
IXYS Semiconductor
4 Pages / 0.21 MByte
IXYS Semiconductor
6 Pages / 1.89 MByte
IXYS Semiconductor
Single N-Channel 600V 830W 150NC Through Hole Power Mosfet - TO-264
IXYS Semiconductor
MOSFET N-CH 600V 48A TO-264
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