| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-264-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.052 Ω |
| Polarity | N-Channel |
| Power Dissipation | 625 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 500 V |
| Continuous Drain Current (Ids) | 70.0 A |
| Rise Time | 29 ns |
| Isolation Voltage | 2.50 kV |
| Input Capacitance (Ciss) | 20000pF @25V(Vds) |
| Fall Time | 26 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 625W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFL100N50P is a PolarHV™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features silicon chip on direct-copper-bond substrate and high power density.
● Avalanche rating
● International standard isolated package
● High power dissipation
● Isolated mounting surface
● Unclamped inductive switching (UIS) rating
● Low package inductance - Easy to drive and to protect
● Easy to mount
● Space saving
IXYS Semiconductor
8 Pages / 0.57 MByte
IXYS Semiconductor
6 Pages / 0.15 MByte
IXYS Semiconductor
Single N-Channel 500V 625W 240NC Through Hole Power Mosfet - ISOPLUS264
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