| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 120 A |
| Case/Package | SOT-227-4 |
| Power Rating | 600 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.017 Ω |
| Polarity | N-Channel |
| Power Dissipation | 600 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 120 A |
| Rise Time | 55 ns |
| Input Capacitance (Ciss) | 9100pF @25V(Vds) |
| Input Power (Max) | 600 W |
| Fall Time | 40 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 600W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFN120N20 is a 200V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on). The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
● Encapsulating epoxy meets UL94V-0 flammability
● miniBLOC with aluminium nitride isolation
● Rugged polysilicon gate cell structure
● Unclamped Inductive Switching (UIS) rated
● Low inductance
● High power density
● Easy to mount
● Space-saving s
IXYS Semiconductor
2 Pages / 0.07 MByte
IXYS Semiconductor
4 Pages / 0.15 MByte
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