| TYPE | DESCRIPTION |
|---|
| Number of Pins | 4 Pin |
| Case/Package | SOT-227-4 |
| Number of Channels | 1 Channel |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 0.018 Ω |
| Polarity | N-Channel |
| Power Dissipation | 680 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Continuous Drain Current (Ids) | 140 A |
| Rise Time | 35 ns |
| Input Capacitance (Ciss) | 7500pF @25V(Vds) |
| Fall Time | 90 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 680000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 38.23 mm |
| Size-Width | 25.42 mm |
| Size-Height | 9.6 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IXFN140N20P is a PolarHT™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features reduced static drain-to-source ON-resistance and high power density.
● International standard packages
● Unclamped inductive switching (UIS) rating
● Low package inductance - Easy to drive and to protect
● Easy to mount
● Space saving
IXYS Semiconductor
5 Pages / 0.09 MByte
IXYS Semiconductor
2 Pages / 0.68 MByte
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