| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | SOT-227-4 |
| Power Rating | 600 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.01 Ω |
| Polarity | N-Channel |
| Power Dissipation | 600 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Continuous Drain Current (Ids) | 170 A |
| Rise Time | 90 ns |
| Input Capacitance (Ciss) | 10300pF @25V(Vds) |
| Fall Time | 79 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 600W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 38.3 mm |
| Size-Width | 25.07 mm |
| Size-Height | 9.6 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFN170N10 is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static drain-to-source ON-resistance HDMOS™ process and high power density. It is suitable for DC-to-DC converters, synchronous rectification, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.
● International standard packages
● Rugged polysilicon gate cell structure
● Unclamped inductive switching (UIS) rating
● Low package inductance
● Easy to mount
● Space saving
● UL94V-0 Flammability rating
IXYS Semiconductor
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IXYS Semiconductor
4 Pages / 0.14 MByte
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