TYPE | DESCRIPTION |
---|
Mounting Style | Chassis |
Number of Pins | 4 Pin |
Case/Package | SOT-227-4 |
Number of Channels | 1 Channel |
Drain to Source Resistance (on) (Rds) | 12.9 mΩ |
Power Dissipation | 900 W |
Threshold Voltage | 5 V |
Drain to Source Voltage (Vds) | 250 V |
Breakdown Voltage (Drain to Source) | 250 V |
Rise Time | 33 ns |
Input Capacitance (Ciss) | 28000pF @25V(Vds) |
Input Power (Max) | 900 W |
Fall Time | 28 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 900W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 38.23 mm |
Size-Width | 25.42 mm |
Size-Height | 12.22 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
●Features
●International Standard Package
●miniBLOC, with Aluminium Nitride Isolation
●Isolation voltage 2500 V~
●High Current Handling Capability
●Fast Intrinsic Diode
●Avalanche Rated
●Low RDS(on)
●Applications
●DC-DC Converters
●Battery Chargers
●Switched-Mode and Resonant-Mode Power Supplies
●DC Choppers
●AC Motor Drives
●Uninterruptible Power Supplies
●High Speed Power Switching Applications
IXYS Semiconductor
6 Pages / 0.16 MByte
IXYS Semiconductor
6 Pages / 0.15 MByte
IXYS Semiconductor
Trans MOSFET N-CH 250V 164A Automotive 4Pin SOT-227B
Littelfuse
Power Field-Effect Transistor,
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