| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 70.0 V |
| Current Rating | 200 A |
| Case/Package | SOT-227-4 |
| Power Rating | 520 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.006 Ω |
| Polarity | N-Channel |
| Power Dissipation | 520 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 70 V |
| Breakdown Voltage (Drain to Source) | 70 V |
| Continuous Drain Current (Ids) | 200 A |
| Rise Time | 60 ns |
| Isolation Voltage | 2.50 kV |
| Input Capacitance (Ciss) | 9000pF @25V(Vds) |
| Input Power (Max) | 520 W |
| Fall Time | 60 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 520W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 38.23 mm |
| Size-Width | 25.42 mm |
| Size-Height | 9.6 mm |
| Weight | 44.0 g |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFN200N07 is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static ON-resistance HDMOS™ process and high power density. It is suitable for DC-to-DC converters, synchronous rectification, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.
● International standard packages
● MiniBLOC with aluminium nitride isolation
● Rugged polysilicon gate cell structure
● Unclamped inductive switching (UIS) rating
● Low package inductance
● Easy to mount
● Space saving
IXYS Semiconductor
3 Pages / 0.09 MByte
IXYS Semiconductor
2 Pages / 0.68 MByte
IXYS Semiconductor
Trans MOSFET N-CH 100V 200A 4Pin SOT-227B
Littelfuse
Trans MOSFET N-CH 100V 200A 4-Pin SOT-227B
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