| TYPE | DESCRIPTION |
|---|
| Number of Pins | 4 Pin |
| Case/Package | SOT-227-4 |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 0.32 Ω |
| Polarity | N-Channel |
| Power Dissipation | 520 W |
| Threshold Voltage | 4.5 V |
| Drain to Source Voltage (Vds) | 800 V |
| Continuous Drain Current (Ids) | 27.0 A |
| Rise Time | 28 ns |
| Isolation Voltage | 2.50 kV |
| Input Capacitance (Ciss) | 7600pF @25V(Vds) |
| Input Power (Max) | 520 W |
| Fall Time | 13 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 520W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 38.2 mm |
| Size-Width | 25.07 mm |
| Size-Height | 9.6 mm |
| Weight | 40.0 g |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFN27N80Q is a Q-class HiPerFET™ N-channel enhancement-mode Single Die Power MOSFET features avalanche rated and fast intrinsic rectifier.
● International standard package
● miniBLOC with aluminium nitride isolation
● UL94V-0 Flammability rating
● Unclamped inductive switching (UIS) rated
● Rugged polysilicon gate cell structure
● Low package inductance
● Easy to mount
● Space savings
● High power density
● High dV/dt and low trr
IXYS Semiconductor
2 Pages / 0.1 MByte
IXYS Semiconductor
2 Pages / 0.68 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
