| TYPE | DESCRIPTION |
|---|
| Mounting Style | Chassis |
| Number of Pins | 3 Pin |
| Case/Package | SOT-227-4 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.35 Ω |
| Polarity | N-Channel |
| Power Dissipation | 780 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 1.2 kV |
| Breakdown Voltage (Drain to Source) | 1200 V |
| Continuous Drain Current (Ids) | 32.0 A |
| Rise Time | 42 ns |
| Input Capacitance (Ciss) | 15900pF @25V(Vds) |
| Fall Time | 22 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Junction Temperature (Max) | 150 ℃ |
| Power Dissipation (Max) | 780000 mW |
| TYPE | DESCRIPTION |
|---|
| Packaging | Box |
| Material | Silicon |
| Size-Length | 38.23 mm |
| Size-Width | 25.42 mm |
| Size-Height | 9.6 mm |
| Weight | 0.000036 kg |
| Operating Temperature | -55℃ ~ 150℃ |
The IXFN32N120 is a 1200V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on) HDMOS™ process. The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
● miniBLOC with aluminium nitride isolation
● Rugged polysilicon gate cell structure
● Unclamped Inductive Switching (UIS) rated
● Low inductance
● High power density
● Easy to mount
● Space-saving s
IXYS Semiconductor
4 Pages / 0.56 MByte
IXYS Semiconductor
4 Pages / 0.55 MByte
IXYS Semiconductor
IXYS SEMICONDUCTOR IXFN32N120 Power MOSFET, N Channel, 32A, 1.2kV, 350mohm, 10V, 5V
IXYS Semiconductor
Trans MOSFET N-CH 1kV 27A 4Pin SOT-227B
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