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IXFN32N120P
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IXFN32N120P Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:MOSFETs
Case Package:SOT-227-4
Description:SOT-227B N-CH 1200V 32A
Documentation:IXFN32N120P Datasheet (5 Pages)
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IXFN32N120P Datasheet PDF (5 Pages)
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IXFN32N120P Specifications

TYPEDESCRIPTION
Mounting StyleChassis
Number of Pins4 Pin
Case/PackageSOT-227-4
PolarityN-CH
Power Dissipation830 W
Threshold Voltage6.5 V
Drain to Source Voltage (Vds)1200 V
Continuous Drain Current (Ids)32A
Rise Time62 ns
Input Capacitance (Ciss)21000pF @25V(Vds)
Fall Time48 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)1000W (Tc)
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IXFN32N120P Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXFN32N120P Documents

IXFN32N120P Datasheet
IXYS Semiconductor
5 Pages / 0.11 MByte
IXFN32N120P Other Datasheet PDF
IXYS Semiconductor
5 Pages / 0.11 MByte

IXFN32N120 Documents

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IXYS Semiconductor
IXYS SEMICONDUCTOR IXFN32N120 Power MOSFET, N Channel, 32A, 1.2kV, 350mohm, 10V, 5V
IXFN32N120P Datasheet PDF
IXYS Semiconductor
SOT-227B N-CH 1200V 32A
IXFN32N120P Datasheet PDF
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