IXFN32N80P Datasheet PDF - IXYS Semiconductor

Manufacturer:	IXYS Semiconductor
Category:	MOSFETs
Case Package:	SOT-227-4
Description:	SOT-227B N-CH 800V 29A
Documentation:	IXFN32N80P Datasheet (4 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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IXFN32N80P Specifications

TYPE	DESCRIPTION
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	SOT-227-4
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	270 mΩ
Polarity	N-CH
Power Dissipation	625 W
Drain to Source Voltage (Vds)	800 V
Breakdown Voltage (Drain to Source)	800 V
Continuous Drain Current (Ids)	29A
Rise Time	29 ns
Input Capacitance (Ciss)	8820pF @25V(Vds)
Input Power (Max)	625 W
Fall Time	26 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	625W (Tc)