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IXFN36N60
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IXFN36N60 Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:MOSFETs
Case Package:SOT-227-4
Description:SOT-227B N-CH 600V 36A
Documentation:IXFN36N60 Datasheet (4 Pages)
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IXFN36N60 Datasheet PDF (4 Pages)
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IXFN36N60 Specifications

TYPEDESCRIPTION
Mounting StyleScrew
Voltage Rating (DC)600 V
Current Rating36.0 A
Case/PackageSOT-227-4
Number of Channels1 Channel
Drain to Source Resistance (on) (Rds)180 mΩ
PolarityN-Channel
Power Dissipation520W (Tc)
Drain to Source Voltage (Vds)600 V
Continuous Drain Current (Ids)36.0 A
Rise Time45.0 ns
Input Capacitance (Ciss)9000pF @25V(Vds)
Power Dissipation (Max)520W (Tc)
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IXFN36N60 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusNot Recommended
PackagingTube
Size-Width25.42 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXFN36N60 Documents

IXFN36N60 Datasheet
IXYS Semiconductor
4 Pages / 0.18 MByte

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Littelfuse
Trans MOSFET N-CH Si 1KV 36A 4-Pin SOT-227B
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