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IXFN38N100P
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IXFN38N100P Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:MOSFETs
Case Package:SOT-227-4
Description:SOT-227B N-CH 1000V 38A
Documentation:IXFN38N100P Datasheet (5 Pages)
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IXFN38N100P Datasheet PDF (5 Pages)
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IXFN38N100P Specifications

TYPEDESCRIPTION
Number of Pins4 Pin
Case/PackageSOT-227-4
Number of Channels1 Channel
Drain to Source Resistance (on) (Rds)210 mΩ
PolarityN-CH
Power Dissipation1 kW
Drain to Source Voltage (Vds)1000 V
Breakdown Voltage (Drain to Source)1000 V
Continuous Drain Current (Ids)38A
Rise Time55 ns
Input Capacitance (Ciss)24000pF @25V(Vds)
Input Power (Max)1000 W
Fall Time40 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)1000W (Tc)
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IXFN38N100P Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Size-Length38.23 mm
Size-Width25.42 mm
Size-Height9.6 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXFN38N100P Documents

IXFN38N100P Datasheet
IXYS Semiconductor
5 Pages / 0.13 MByte
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