| TYPE | DESCRIPTION |
|---|
| Mounting Style | Chassis |
| Number of Pins | 4 Pin |
| Case/Package | SOT-227-4 |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 0.19 Ω |
| Polarity | N-Channel |
| Power Dissipation | 694 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 800 V |
| Continuous Drain Current (Ids) | 44.0 A |
| Rise Time | 22 ns |
| Input Capacitance (Ciss) | 12000pF @25V(Vds) |
| Fall Time | 27 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 694W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFN44N80P is a PolarHV™ HiPerFET N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic diode.
● International standard package
● miniBLOC with aluminium nitride isolation
● UL94V-0 Flammability rating
● Unclamped inductive switching (UIS) rated
● Rugged polysilicon gate cell structure
● Low package inductance
● Easy to mount
● Space savings
● High power density
IXYS Semiconductor
4 Pages / 0.08 MByte
IXYS Semiconductor
2 Pages / 0.68 MByte
IXYS Semiconductor
4 Pages / 0.08 MByte
IXYS Semiconductor
Trans MOSFET N-CH 800V 44A 4Pin SOT-227B
IXYS Semiconductor
IXYS SEMICONDUCTOR IXFN44N80P Power MOSFET, N Channel, 44A, 800V, 190mohm, 10V, 5V
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