| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
| Number of Pins | 4 Pin |
| Case/Package | SOT-227-4 |
| Power Rating | 1135 W |
| Polarity | N-CH |
| Power Dissipation | 1135 W |
| Drain to Source Voltage (Vds) | 800 V |
| Continuous Drain Current (Ids) | 50A |
| Rise Time | 25 ns |
| Input Capacitance (Ciss) | 13500pF @25V(Vds) |
| Input Power (Max) | 890 W |
| Fall Time | 13 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1135W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended |
| Packaging | Tube |
| Size-Length | 38.23 mm |
| Size-Width | 25.42 mm |
| Size-Height | 9.6 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Make an effective common source amplifier using this IXFN50N80Q2 power MOSFET from Ixys Corporation. Its maximum power dissipation is 1135000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.
IXYS Semiconductor
4 Pages / 0.12 MByte
IXYS Semiconductor
4 Pages / 0.11 MByte
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