| TYPE | DESCRIPTION |
|---|
| Mounting Style | Panel |
| Number of Pins | 4 Pin |
| Case/Package | SOT-227-4 |
| Number of Channels | 1 Channel |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 140 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 1.04 kW |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 800 V |
| Breakdown Voltage (Drain to Source) | 800 V |
| Continuous Drain Current (Ids) | 60.0 A |
| Rise Time | 29 ns |
| Input Capacitance (Ciss) | 18000pF @25V(Vds) |
| Input Power (Max) | 1040 W |
| Fall Time | 26 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1040W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 38.23 mm |
| Size-Width | 25.42 mm |
| Size-Height | 9.6 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFN60N80P is a 800V N-channel Enhancement Mode PolarHV™ Power MOSFET with fast intrinsic diode (HiPerFET™). The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
● Encapsulating epoxy meets UL94V-0 flammability
● miniBLOC with aluminium nitride isolation
● Fast recovery diode
● Unclamped Inductive Switching (UIS) rated
● Low inductance offers easy to drive and protect
● High power density
● Easy to mount
● Space-saving s
IXYS Semiconductor
4 Pages / 0.14 MByte
IXYS Semiconductor
2 Pages / 0.68 MByte
IXYS Semiconductor
Power MOSFET, N Channel, 60A, 800V, 140mohm, 10V, 5V
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