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IXFN62N80Q3
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IXFN62N80Q3 Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:MOSFETs
Case Package:SOT-227-4
Description:SOT-227B N-CH 800V 49A
Documentation:IXFN62N80Q3 Datasheet (5 Pages)
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IXFN62N80Q3 Datasheet PDF (5 Pages)
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IXFN62N80Q3 Specifications

TYPEDESCRIPTION
Number of Pins4 Pin
Case/PackageSOT-227-4
Number of Channels1 Channel
PolarityN-CH
Power Dissipation960 W
Drain to Source Voltage (Vds)800 V
Continuous Drain Current (Ids)49A
Rise Time20 ns
Input Capacitance (Ciss)13600pF @25V(Vds)
Fall Time11 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)960W (Tc)
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IXFN62N80Q3 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Size-Length38.23 mm
Size-Width25.07 mm
Size-Height9.6 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXFN62N80Q3 Documents

IXFN62N80Q3 Datasheet
IXYS Semiconductor
5 Pages / 0.12 MByte
IXFN62N80Q3 Other Datasheet PDF
IXYS Semiconductor
5 Pages / 0.12 MByte

IXFN62N80 Documents

IXFN62N80Q3 Datasheet PDF
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SOT-227B N-CH 800V 49A
IXFN62N80Q3 Datasheet PDF
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