| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 500 V |
| Current Rating | 64.0 A |
| Case/Package | SOT-227-4 |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 0.085 Ω |
| Polarity | N-Channel |
| Power Dissipation | 700 W |
| Threshold Voltage | 5.5 V |
| Input Capacitance | 8.70 nF |
| Gate Charge | 150 nC |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Continuous Drain Current (Ids) | 61.0 A |
| Input Capacitance (Ciss) | 8700pF @25V(Vds) |
| Input Power (Max) | 700 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 700W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 38.23 mm |
| Size-Width | 25.42 mm |
| Size-Height | 9.6 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFN64N50P is a single N-channel Power MOSFET with fast intrinsic diode (HiPerFET™). It features low gate drive requirement and high power density. It is suitable for DC-to-DC converters, laser drivers, switched-mode and resonant-mode power supplies.
● International standard packages
● MiniBLOC with aluminium nitride isolation
● Fast intrinsic diode
● Avalanche rating
● Low static drain-to-source ON-resistance
● 2500V Isolation voltage
IXYS Semiconductor
4 Pages / 0.14 MByte
IXYS Semiconductor
4 Pages / 0.11 MByte
IXYS Semiconductor
Trans MOSFET N-CH 500V 50A 4Pin SOT-227B
IXYS Semiconductor
Polar Power MOSFET HiPerFET
Littelfuse
Trans MOSFET N-CH 500V 50A 4-Pin SOT-227B
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
