| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 500 V |
| Current Rating | 80.0 A |
| Case/Package | SOT-227-4 |
| Number of Channels | 1 Channel |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 0.055 Ω |
| Polarity | N-Channel |
| Power Dissipation | 780 W |
| Threshold Voltage | 4.5 V |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Continuous Drain Current (Ids) | 80.0 A |
| Rise Time | 70 ns |
| Input Capacitance (Ciss) | 9890pF @25V(Vds) |
| Input Power (Max) | 780 W |
| Fall Time | 27 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Junction Temperature (Max) | 150 ℃ |
| Power Dissipation (Max) | 700W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 38.23 mm |
| Size-Width | 25.42 mm |
| Size-Height | 9.6 mm |
| Weight | 0.000036 kg |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFN80N50 is a N-channel enhancement mode Power MOSFET features miniBLOC, with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and unclamped inductive switching (UIS) rated.
● Fast intrinsic rectifier
● High dv/dt rating
● Rugged polysilicon gate cell structure
● Easy to mount
● Space savings
● High power density
IXYS Semiconductor
4 Pages / 0.55 MByte
IXYS Semiconductor
2 Pages / 0.68 MByte
IXYS Semiconductor
Trans MOSFET N-CH 500V 66A 4Pin SOT-227B
IXYS Semiconductor
Trans MOSFET N-CH 500V 80A 4Pin SOT-227B
Littelfuse
Power Field-Effect Transistor, 80A I(D), 500V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC, 4 PIN
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