TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 4 Pin |
Case/Package | SOT-227-4 |
Drain to Source Resistance (on) (Rds) | 0.065 Ω |
Polarity | N-Channel |
Power Dissipation | 780 W |
Threshold Voltage | 6.5 V |
Drain to Source Voltage (Vds) | 500 V |
Continuous Drain Current (Ids) | 63A |
Input Capacitance (Ciss) | 10000pF @25V(Vds) |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 780W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 38.23 mm |
Size-Width | 25.07 mm |
Size-Height | 9.6 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
VDSS = 500V
●ID25 = 63A
●RDS(on) ≤ 65mΩ
●trr ≤ 250ns
●N-Channel Enhancement Mode
●Fast Intrinsic Rectifier
●Features
●International Standard Package
●Low Intrinsic Gate Resistance
●miniBLOC with Aluminum Nitride Isolation
●Low Package Inductance
●Fast Intrinsic Rectifier
●Low RDS(on) and QG
●Advantages
●High Power Density
●Easy to Mount
●Space Savings
IXYS Semiconductor
5 Pages / 0.12 MByte
IXYS Semiconductor
6 Pages / 0.22 MByte
IXYS Semiconductor
Trans MOSFET N-CH 500V 66A 4Pin SOT-227B
IXYS Semiconductor
Trans MOSFET N-CH 500V 80A 4Pin SOT-227B
Littelfuse
Power Field-Effect Transistor, 80A I(D), 500V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC, 4 PIN
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