| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 1.9 Ω |
| Polarity | N-CH |
| Power Dissipation | 300 W |
| Drain to Source Voltage (Vds) | 1000 V |
| Breakdown Voltage (Drain to Source) | 1000 V |
| Continuous Drain Current (Ids) | 7A |
| Rise Time | 49 ns |
| Input Capacitance (Ciss) | 2590pF @25V(Vds) |
| Fall Time | 44 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Thanks to Ixys Corporation, both your amplification and switching needs can be taken care of with one component: the IXFP7N100P power MOSFET. Its maximum power dissipation is 300000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.
IXYS Semiconductor
5 Pages / 0.23 MByte
IXYS Semiconductor
7 Pages / 0.32 MByte
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