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IXFT12N100F
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IXFT12N100F Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:MOSFETs
Case Package:TO-268-3
Description:TO-268 N-CH 1000V 12A
Documentation:IXFT12N100F Datasheet (3 Pages)
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IXFT12N100F Datasheet PDF (3 Pages)
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IXFT12N100F Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Case/PackageTO-268-3
Number of Channels1 Channel
Drain to Source Resistance (on) (Rds)1.05 Ω
PolarityN-CH
Power Dissipation300 W
Drain to Source Voltage (Vds)1000 V
Breakdown Voltage (Drain to Source)1000 V
Continuous Drain Current (Ids)12A
Rise Time9.8 ns
Input Capacitance (Ciss)2700pF @25V(Vds)
Fall Time12 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)55 ℃
Power Dissipation (Max)300W (Tc)
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IXFT12N100F Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusObsolete
PackagingTube
Size-Length16.05 mm
Size-Width14 mm
Size-Height5.1 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXFT12N100F Documents

IXFT12N100F Datasheet
IXYS Semiconductor
3 Pages / 0.1 MByte
IXFT12N100F Other Datasheet PDF
IXYS Semiconductor
2 Pages / 0.38 MByte

IXFT12N100 Documents

IXFT12N100 Datasheet PDF
IXYS Semiconductor
TO-268 N-CH 1000V 12A
IXFT12N100Q Datasheet PDF
IXYS Semiconductor
TO-268 N-CH 1000V 12A
IXFT12N100F Datasheet PDF
IXYS Semiconductor
TO-268 N-CH 1000V 12A
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