| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Channels | 1 Channel |
| Polarity | N-CH |
| Power Dissipation | 960000 mW |
| Threshold Voltage | 6.5 V |
| Drain to Source Voltage (Vds) | 1200 V |
| Continuous Drain Current (Ids) | 26A |
| Rise Time | 55 ns |
| Input Capacitance (Ciss) | 16000pF @25V(Vds) |
| Fall Time | 58 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 960W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Width | 5.21 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Amplify electronic signals and switch between them with the help of Ixys Corporation"s IXFX26N120P power MOSFET. Its maximum power dissipation is 960000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.
IXYS Semiconductor
4 Pages / 0.12 MByte
IXYS Semiconductor
8 Pages / 0.24 MByte
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