| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 300 W |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Power (Max) | 300 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 9.65 mm |
| Size-Width | 10.41 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXGA30N120B3 is a GenX3™ IGBT for use with 3 to 20kHz switching applications. It is optimized for low conduction and switching losses. It features high power density and low gate drive requirement.
● Square RBSOA
● High-speed low-Vsat PT
IXYS Semiconductor
7 Pages / 0.2 MByte
IXYS Semiconductor
6 Pages / 0.2 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 60A 300000mW 3Pin(2+Tab) TO-263AA
Littelfuse
Trans IGBT Chip N-CH 1200V 60A 300000mW 3-Pin(2+Tab) D2PAK
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