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IXGA30N60C3C1
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IXGA30N60C3C1 Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:IGBTs
Case Package:TO-263-3
Description:IXYS SEMICONDUCTOR IXGA30N60C3C1 IGBT Single Transistor, SIC, 60A, 3V, 220W, 600V, TO-263, 3Pins
Documentation:IXGA30N60C3C1 Datasheet (7 Pages)
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IXGA30N60C3C1 Datasheet PDF (7 Pages)
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IXGA30N60C3C1 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins3 Pin
Case/PackageTO-263-3
Power Dissipation220 W
Breakdown Voltage (Collector to Emitter)600 V
Input Power (Max)220 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)55 ℃
Power Dissipation (Max)220000 mW
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IXGA30N60C3C1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Size-Length9.65 mm
Size-Width10.41 mm
Size-Height4.83 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXGA30N60C3C1 Documents

IXGA30N60C3C1 Datasheet
IXYS Semiconductor
7 Pages / 0.27 MByte
IXGA30N60C3C1 Other Datasheet PDF
IXYS Semiconductor
7 Pages / 0.27 MByte

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IXGA30N60C3C1 Datasheet PDF
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IXGA30N60C3D4 Datasheet PDF
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