| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | i4-Pac |
| Power Dissipation | 114000 mW |
| Breakdown Voltage (Collector to Emitter) | 3000 V |
| Input Power (Max) | 114 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 114000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Height | 20.88 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
You can use this IXGF25N300 IGBT transistor from Ixys Corporation as an electronic switch. Its maximum power dissipation is 114000 mW. It has a maximum collector emitter voltage of 3000 V. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
IXYS Semiconductor
2 Pages / 0.11 MByte
IXYS Semiconductor
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