| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Dissipation | 460 W |
| Breakdown Voltage (Collector to Emitter) | 300 V |
| Input Power (Max) | 460 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 460000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.26 mm |
| Size-Width | 5.3 mm |
| Size-Height | 21.46 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
This IXGH100N30C3 IGBT transistor from Ixys Corporation is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 300 V. Its maximum power dissipation is 460000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
IXYS Semiconductor
6 Pages / 0.1 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 300V 75A 460000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Mid-Frequency Range (15kHz-40kHz)
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