| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Rating | 190 W |
| Number of Positions | 3 Position |
| Power Dissipation | 190 W |
| Breakdown Voltage (Collector to Emitter) | 1700 V |
| Input Power (Max) | 190 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 190000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.26 mm |
| Size-Width | 5.3 mm |
| Size-Height | 21.46 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Minimize the current at your gate with the IXGH16N170 IGBT transistor from Ixys Corporation. Its maximum power dissipation is 190000 mW. It has a maximum collector emitter voltage of 1700 V. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
IXYS Semiconductor
5 Pages / 0.14 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 1700V 32A 190000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 1700V 16A 190000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 40A 150000mW 3Pin(3+Tab) TO-247
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 40A 3Pin(3+Tab) TO-247
IXYS Semiconductor
Trans IGBT Chip N-CH 1700V 16A 190000mW 3Pin(3+Tab) TO-247
IXYS Semiconductor
IGBT Transistors 600V 16A
Littelfuse
Trans IGBT Chip N-CH 1700V 32A 190000mW 3-Pin(3+Tab) TO-247AD
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
