| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 180 W |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Power (Max) | 180 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 180 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.26 mm |
| Size-Width | 5.3 mm |
| Size-Height | 21.46 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The IXGH20N120A3 is a PT IGBT for use with up to 3kHz switching applications, battery chargers and inrush current protection circuits. It is optimized for low conduction losses.
● Ultra-low saturation voltage
● High power density
● Low gate drive requirement
IXYS Semiconductor
6 Pages / 0.22 MByte
IXYS Semiconductor
6 Pages / 0.23 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 40A 150000mW 3Pin(3+Tab) TO-247
IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 40A 180000mW 3Pin(3+Tab) TO-247
IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 40A 190000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 40A 190000mW 3Pin(3+Tab) TO-247AD
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