| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Power (Max) | 200 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Features
●• International standard packages
● JEDEC TO-268 surface
● mountable and JEDEC TO-247 AD
●• High current handling capability
●• Latest generation HDMOS™ process
●• MOS Gate turn-on
●\- drive simplicity
IXYS Semiconductor
2 Pages / 0.05 MByte
IXYS Semiconductor
5 Pages / 0.3 MByte
IXYS Semiconductor
Low VCE(sat) IGBT High speed IGBT
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 60A 220000mW 3Pin(3+Tab) TO-247
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 60A 220000mW 3Pin(3+Tab) TO-247
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 60A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 70A 190000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 70A 190000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 60A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 50A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
IGBT 600V 60A 220W TO247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 70A 190000mW 3Pin(3+Tab) TO-247
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
