| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 25 ns |
| Input Power (Max) | 190 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 190000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
C2-Class High Speed IGBTs
●Features
●Very high frequency IGBT
●Square RBSOA
●High current handling capability
●MOS Gate turn-on
●\- drive simplicity
IXYS Semiconductor
6 Pages / 0.16 MByte
IXYS Semiconductor
5 Pages / 0.3 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 70A 190000mW 3Pin(3+Tab) TO-247
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 70A 3Pin (3+Tab) TO-247
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 70A 190000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
TRANS IGBT CHIP N-CH 600V 70A 3Pin(3+TAB) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 70A 190000mW 3-Pin(3+Tab) TO-247AD
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