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IXGH31N60
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IXGH31N60 Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:IGBTs
Case Package:TO-247-3
Description:Trans IGBT Chip N-CH 600V 60A 150000mW 3Pin(3+Tab) TO-247AD
Documentation:IXGH31N60 Datasheet (2 Pages)
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IXGH31N60 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-247-3
Power Dissipation150000 mW
Breakdown Voltage (Collector to Emitter)600 V
Input Power (Max)150 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)150000 mW
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IXGH31N60 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusObsolete
PackagingTube
Size-Length16.26 mm
Size-Width5.3 mm
Size-Height21.46 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXGH31N60 Documents

IXGH31N60 Datasheet
IXYS Semiconductor
2 Pages / 0.05 MByte
IXGH31N60 Other Datasheet PDF
IXYS Semiconductor
5 Pages / 0.3 MByte

IXGH31 Documents

IXGH31N60 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 60A 150000mW 3Pin(3+Tab) TO-247AD
IXGH31N60D1 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 60A 3Pin(3+Tab) TO-247AD
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