TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 1.70 kV |
Current Rating | 75.0 A |
Case/Package | TO-247-3 |
Power Dissipation | 350000 mW |
Rise Time | 57.0 ns |
Breakdown Voltage (Collector to Emitter) | 1700 V |
Input Power (Max) | 350 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 350000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
This IXGH32N170A IGBT transistor from Ixys Corporation will work perfectly in your circuit. Its maximum power dissipation is 350000 mW. It has a maximum collector emitter voltage of 1700 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
IXYS Semiconductor
5 Pages / 0.57 MByte
IXYS Semiconductor
5 Pages / 0.55 MByte
IXYS Semiconductor
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