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IXGH35N120B
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IXGH35N120B Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:IGBTs
Case Package:TO-247-3
Description:Trans IGBT Chip N-CH 1200V 70A 300000mW 3Pin(3+Tab) TO-247AD
Documentation:IXGH35N120B Datasheet (2 Pages)
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IXGH35N120B Datasheet PDF (2 Pages)
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IXGH35N120B Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-247-3
Power Dissipation300000 mW
Breakdown Voltage (Collector to Emitter)1200 V
Input Power (Max)300 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)300000 mW
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IXGH35N120B Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusNot Recommended for New Designs
PackagingTube
Size-Length16.26 mm
Size-Width5.3 mm
Size-Height21.46 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXGH35N120B Documents

IXGH35N120B Datasheet
IXYS Semiconductor
2 Pages / 0.05 MByte
IXGH35N120B Other Datasheet PDF
IXYS Semiconductor
2 Pages / 0.14 MByte

IXGH35N120 Documents

IXGH35N120B Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 70A 300000mW 3Pin(3+Tab) TO-247AD
IXGH35N120C Datasheet PDF
IXYS Semiconductor
IGBT 1200V 70A 300W TO247AD
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