| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Dissipation | 360000 mW |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Power (Max) | 360 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 360000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Width | 5.3 mm |
| Size-Height | 21.46 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Minimize the current at your gate with the IXGH40N120A2 IGBT transistor from Ixys Corporation. Its maximum power dissipation is 360000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
IXYS Semiconductor
5 Pages / 0.17 MByte
IXYS Semiconductor
5 Pages / 0.16 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 75A 380000mW 3Pin(3+Tab) TO-247
IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 75A 380000mW 3Pin(3+Tab) TO-247
IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 75A 360000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
IGBT 1200V 75A 380W TO247
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