| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 300 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Power (Max) | 300 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXGH48N60B3C1 is a GenX3™ medium speed PT IGBT with SiC anti-parallel diode. It is optimized for low conduction and switching losses. It is suitable for battery chargers, welding machines and 5 to 40kHz switching applications.
● Low saturation voltage
● Square RBSOA
● Anti-parallel Schottky diode
● High power density
● Low gate drive requirement
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