TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Power Dissipation | 480000 mW |
Breakdown Voltage (Collector to Emitter) | 600 V |
Input Power (Max) | 480 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 480000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Tube |
Size-Height | 21.46 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
HiPerFAST™ IGBT C2-Class High Speed IGBTs
●Features
●Very high frequency IGBT
●Square RBSOA
●High current handling capability
●MOS Gate turn-on
●\- drive simplicity
●Applications
●PFC circuits
●Uninterruptible power supplies (UPS)
●Switched-mode and resonant-mode power supplies
●AC motor speed control
●DC servo and robot drives
●DC choppers
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Littelfuse
Insulated Gate Bipolar Transistor,
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