| TYPE | DESCRIPTION |
|---|
| Power Dissipation | 250000 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 250000 mW |
Features
●International standard packages
●2nd generation HDMOS™ process
●Low VCE(sat)
● - for low on-state conduction losses
●High current handling capability
●MOS Gate turn-on
● - drive simplicity
●Voltage rating guaranteed at high temperature (125°C)
●Applications
●AC motor speed control
●DC servo and robot drives
●DC choppers
●Uninterruptible power supplies (UPS)
●Switch-mode and resonant-mode power supplies
IXYS Semiconductor
4 Pages / 0.1 MByte
IXYS Semiconductor
4 Pages / 0.1 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 75A 250000mW 3Pin(2+Tab) TO-204AE
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 75A 250000mW
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