| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 75.0 A |
| Case/Package | TO-204 |
| Power Dissipation | 250000 mW |
| Rise Time | 200 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Capacitance (Cies) | 4.5nF @25V |
| Input Power (Max) | 250 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 250000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Features
●International standard packages
●2nd generation HDMOS™ process
●Low VCE(sat)
● - for low on-state conduction losses
●High current handling capability
●MOS Gate turn-on
● - drive simplicity
●Voltage rating guaranteed at high temperature (125°C)
●Applications
●AC motor speed control
●DC servo and robot drives
●DC choppers
●Uninterruptible power supplies (UPS)
●Switch-mode and resonant-mode power supplies
IXYS Semiconductor
4 Pages / 0.1 MByte
IXYS Semiconductor
5 Pages / 0.3 MByte
IXYS Semiconductor
4 Pages / 0.1 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 75A 250000mW
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 75A 250000mW 3Pin(2+Tab) TO-204AE
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