| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | SOT-227-4 |
| Power Rating | 735 W |
| Power Dissipation | 735000 mW |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Capacitance (Cies) | 18nF @25V |
| Input Power (Max) | 735 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 735000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 38.23 mm |
| Size-Width | 25.42 mm |
| Size-Height | 9.6 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
IXYS extends its GenX3™ insulated gate bipolar transistor (IGBT) product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3™ IGBT process and utilize IXYS’ advanced Punch-Though (PT) technology, tailored to provide higher surge current capabilities, lower saturation voltages, and lower switching losses.
IXYS Semiconductor
4 Pages / 0.82 MByte
IXYS Semiconductor
5 Pages / 0.15 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 320A 735000mW 4Pin SOT-227B
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