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IXGR40N60C2D1
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IXGR40N60C2D1 Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:IGBTs
Case Package:ISOPLUS-247
Description:Trans IGBT Chip N-CH 600V 56A 170000mW 3Pin(3+Tab) ISOPLUS 247
Documentation:IXGR40N60C2D1 Datasheet (6 Pages)
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IXGR40N60C2D1 Datasheet PDF (6 Pages)
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IXGR40N60C2D1 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageISOPLUS-247
Power Dissipation170000 mW
Breakdown Voltage (Collector to Emitter)600 V
Reverse recovery time25 ns
Input Power (Max)170 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)170000 mW
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IXGR40N60C2D1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusObsolete
PackagingTube
Size-Length16.13 mm
Size-Width5.21 mm
Size-Height21.34 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXGR40N60C2D1 Documents

IXGR40N60C2D1 Datasheet
IXYS Semiconductor
6 Pages / 0.17 MByte
IXGR40N60C2D1 Other Datasheet PDF
IXYS Semiconductor
6 Pages / 0.17 MByte

IXGR40N60C2 Documents

IXGR40N60C2 Datasheet PDF
IXYS Semiconductor
IXYS SEMICONDUCTOR IXGR40N60C2 IGBT Single Transistor, Isolated, 56A, 2.7V, 170W, 600V, TO-247AD, 3Pins
IXGR40N60C2D1 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 56A 170000mW 3Pin(3+Tab) ISOPLUS 247
IXGR40N60C2G1 Datasheet PDF
IXYS Semiconductor
Igbt 600V Isoplus247
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