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IXGR60N60C3D1
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IXGR60N60C3D1 Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:IGBTs
Case Package:ISOPLUS-247
Description:Trans IGBT Chip N-CH 600V 75A 170000mW 3Pin(3+Tab) ISOPLUS 247
Documentation:IXGR60N60C3D1 Datasheet (8 Pages)
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IXGR60N60C3D1 Datasheet PDF (8 Pages)
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IXGR60N60C3D1 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageISOPLUS-247
Power Dissipation170000 mW
Breakdown Voltage (Collector to Emitter)600 V
Reverse recovery time25 ns
Input Power (Max)170 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)170000 mW
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IXGR60N60C3D1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXGR60N60C3D1 Documents

IXGR60N60C3D1 Datasheet
IXYS Semiconductor
8 Pages / 0.2 MByte
IXGR60N60C3D1 Other Datasheet PDF
IXYS Semiconductor
8 Pages / 0.31 MByte

IXGR60N60C3 Documents

IXGR60N60C3C1 Datasheet PDF
IXYS Semiconductor
IXYS SEMICONDUCTOR IXGR60N60C3C1 IGBT Single Transistor, SIC, 75A, 2.5V, 170W, 600V, TO-247AD, 3Pins
IXGR60N60C3D1 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 75A 170000mW 3Pin(3+Tab) ISOPLUS 247
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