| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-268-3 |
| Power Dissipation | 350 W |
| Breakdown Voltage (Collector to Emitter) | 1700 V |
| Input Power (Max) | 350 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 350000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.05 mm |
| Size-Width | 14 mm |
| Size-Height | 5.1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Don"t be afraid to step up the amps in your device when using this IXGT32N170 IGBT transistor from Ixys Corporation. Its maximum power dissipation is 350000 mW. It has a maximum collector emitter voltage of 1700 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
IXYS Semiconductor
5 Pages / 0.56 MByte
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