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IXGT32N60BD1
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IXGT32N60BD1 Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:IGBTs
Case Package:TO-268-3
Description:Trans IGBT Chip N-CH 600V 60A 3Pin(2+Tab) TO-268
Documentation:IXGT32N60BD1 Datasheet (5 Pages)
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IXGT32N60BD1 Datasheet PDF (5 Pages)
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IXGT32N60BD1 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins3 Pin
Case/PackageTO-268-3
Breakdown Voltage (Collector to Emitter)600 V
Reverse recovery time25 ns
Input Power (Max)200 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)55 ℃
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IXGT32N60BD1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusObsolete
PackagingTube
Size-Length16.05 mm
Size-Width14 mm
Size-Height5.1 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXGT32N60BD1 Documents

IXGT32N60BD1 Datasheet
IXYS Semiconductor
5 Pages / 0.12 MByte
IXGT32N60BD1 Other Datasheet PDF
IXYS Semiconductor
5 Pages / 0.3 MByte

IXGT32N60 Documents

IXGT32N60C Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 60A 3Pin(2+Tab) TO-268
IXGT32N60BD1 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 60A 3Pin(2+Tab) TO-268
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