| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-268-3 |
| Power Dissipation | 75000 mW |
| Breakdown Voltage (Collector to Emitter) | 1700 V |
| Input Power (Max) | 75 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 75000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
This IXGT6N170A IGBT transistor from Ixys Corporation is perfect if your circuit contains high currents passing through it. Its maximum power dissipation is 75000 mW. It has a maximum collector emitter voltage of 1700 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
IXYS Semiconductor
4 Pages / 0.16 MByte
IXYS Semiconductor
5 Pages / 0.18 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 1700V 6A 75000mW 3Pin(2+Tab) TO-268
IXYS Semiconductor
Trans IGBT Chip N-CH 1700V 6A 75000mW 3Pin(2+Tab) TO-268
Littelfuse
Trans IGBT Chip N-CH 1700V 6A 75000mW 3-Pin(2+Tab) TO-268
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